标题： 在Kagome反铁磁体中通过各向异性应变实现电可切换的标量自旋手性 显示英文标题

标题： Imprinting electrically switchable scalar spin chirality by anisotropic strain in a Kagome antiferromagnet

摘要： 拓扑手性反铁磁材料（例如 Mn$_{3}$Sn）由于其与奇异磁结构相关的内在输运特性，正成为下一代自旋电子器件的有前景材料。 在这里，我们证明了 Mn$_{3}$Sn 薄膜中的各向异性应变提供了一种操纵磁基态的新方法，从而解锁了这种材料的新功能。 各向异性应变将锰（Mn）Kagome 三角形的点群对称性从$C_{3v}$减少到$C_{1}$，显著改变了 Mn$_{3}$Sn 中磁态的能量景观。 这种对称性降低使得即使是微小的面内 Dzyaloshinskii-Moriya (DM) 相互作用也能诱导 Mn 自旋从 Kagome 平面倾斜。 修改后的磁基态引入了一个有限的标量自旋手性，并在动量空间中产生了显著的Berry相位。 因此，在室温下，Kagome 平面上出现了大的异常霍尔效应——这种效应在块状材料中不存在。 此外，这种二重简并磁态可以创建多个稳定的、非易失性的异常霍尔电阻（AHR）存储状态。 这些状态是磁场稳定的，可以通过热辅助电流诱导磁化切换来控制，所需的电流密度较低且偏置场较小，从而为 Mn$_{3}$Sn 在自旋电子学应用中提供了引人注目的新功能。 显示英文摘要

摘要： Topological chiral antiferromagnets, such as Mn$_{3}$Sn, are emerging as promising materials for next-generation spintronic devices due to their intrinsic transport properties linked to exotic magnetic configurations. Here, we demonstrate that anisotropic strain in Mn$_{3}$Sn thin films offers a novel approach to manipulate the magnetic ground state, unlocking new functionalities in this material. Anisotropic strain reduces the point group symmetry of the manganese (Mn) Kagome triangles from $C_{3v}$ to $C_{1}$, significantly altering the energy landscape of the magnetic states in Mn$_{3}$Sn. This symmetry reduction enables even a tiny in-plane Dzyaloshinskii-Moriya (DM) interaction to induce canting of the Mn spins out of the Kagome plane. The modified magnetic ground state introduces a finite scalar spin chirality and results in a significant Berry phase in momentum space. Consequently, a large anomalous Hall effect emerges in the Kagome plane at room temperature - an effect that is absent in the bulk material. Moreover, this two-fold degenerate magnetic state enables the creation of multiple-stable, non-volatile anomalous Hall resistance (AHR) memory states. These states are field-stable and can be controlled by thermal assisted current-induced magnetization switching requiring modest current densities and small bias fields, thereby offering a compelling new functionality in Mn$_{3}$Sn for spintronic applications.