标题： 过渡金属碲化物Ta$_2$Pd$_3$Te$_5$中的弱反局域化 显示英文标题

标题： Weak antilocalization in the transition metal telluride Ta$_2$Pd$_3$Te$_5$

摘要： 我们报告了对层状范德华拓扑晶体绝缘体Ta$_2$Pd$_3$Te$_5$的输运研究。 高温下的温度依赖电阻主要由体绝缘能隙主导，并在低温下趋于饱和。 低温磁输运显示， Ta$_2$Pd$_3$Te$_5$在垂直方向和平行方向均表现出弱反局域化（WAL）效应，表明WAL效应的贡献来自拓扑边缘态和体态。 通过测量各向异性磁电导并减去体态的贡献，可以基于二维 Hikami-Larkin-Nagaoka 模型定量地揭示和分析与拓扑边缘态相关的WAL效应。 我们的结果在理解Ta$_2$Pd$_3$Te$_5$中的WAL现象方面具有重要意义。 显示英文摘要

摘要： We report transport studies on the layered van der Waals topological crystalline insulator Ta$_2$Pd$_3$Te$_5$. The temperature-dependent resistance at high temperature is dominated by a bulk insulating gap and tend to saturate at low temperatures. Low temperature magnetotransport shows that Ta$_2$Pd$_3$Te$_5$ exhibits weak antilocatization (WAL) effect in both perpendicular orientation and parallel orientation, suggesting an contribution of the WAL effect from both topological edge states and bulk states. By measuring the anisotropic magnetoconductance and then subtracting the contribution of bulk states, the WAL effect associated with topological edge states can be revealed and analyzed quantitatively based on the two-dimensional Hikami-Larkin-Nagaoka model. Our results have important implications in understanding the WAL phenomena in Ta$_2$Pd$_3$Te$_5$.