标题： 铁磁存储单元中的异常切换模式 显示英文标题

标题： Anomalous switching pattern in the ferrimagnetic memory cell

摘要： 将磁隧道结（MTJ）中的铁磁体替换为亚铁磁体（FiM），可以在皮秒内实现更快的磁化翻转。 由MTJ和晶体管组成的存储单元的操作需要可逆的磁化翻转。 当施加恒定电压时，我们发现自旋转移扭矩只能将FiM-MTJ从平行状态翻转到反平行状态。 这源于FiM的小翻转窗口以及磁化翻转过程中的动态电阻变化。 我们发现，通过降低磁阻比可以抑制产生的电流变化。 此外，我们证明通过调整FiM中Gd的含量可以扩展翻转窗口。 我们预测，在角动量补偿点，开关电流（Jc,switch）和振荡电流（Jc,osc）的极性会发生反转，但在磁化补偿点不会发生反转。 这种异常的动态行为归因于FiM中磁化翻转和振荡的不同物理性质，在设计基于FiM的MRAM时必须考虑这一点。 显示英文摘要

摘要： Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable magnetization switching. When a constant voltage is applied, we find that the spin-transfer torque can only switch the FiM-MTJ from parallel to antiparallel state. This stems from the small switching window of FiM and the dynamic resistance variation during the magnetization switching. We find the resulting current variation can be suppressed by reducing the magnetoresistance ratio. Furthermore, we demonstrate that the switching window can be expanded by adjusting the amount of Gd in FiM. We predict that the polarity of both switching current (Jc,switch) and oscillation current (Jc,osc) reverses at the angular momentum compensation point but not the magnetization compensation point. This anomalous dynamic behavior is attributed to the different physical nature of magnetization switching and oscillation in FiM, which must be considered when designing FiM-based MRAM.