标题： NiO中由正交自旋-轨道扭矩引起的确定性切换 显示英文标题

标题： Orthogonal Spin-Orbit Torque-Induced Deterministic Switching in NiO

摘要： 反铁磁体（AFM）的电切换对于超快磁随机存取存储器（MRAM）的发展非常重要。 在具有复杂各向异性的反铁磁氧化物NiO中，这项任务变得更加困难。 我们表明，通过利用来自正交电流的两个自旋轨道扭矩（SOT），可以确定性地将NiO的磁矩切换到两种可用电学区分的状态，这些状态可以通过自旋霍尔磁阻效应读取。 这种确定性切换依赖于不同亚晶格上的SOT对称性，其中磁矩的符号反转在开始时导致建设性扭矩，在结束时导致平衡扭矩。 此外，我们表明，易平面各向异性在切换过程中起着关键作用，这在一些先前的研究中被忽略了。 本工作中均匀的磁动力学提供了一个清晰的物理图像，以理解NiO的SOT切换。 此外，我们器件中的电写入和读取功能推动了AFM-MRAM的发展。 显示英文摘要

摘要： The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show that by utilizing two spin-orbit torques (SOT) from orthogonal currents, one can deterministically switch the magnetic moments of NiO in two electrical distinguishable states that can be read out using the spin Hall magnetoresistance. This deterministic switching relies on the symmetry of SOT on different sublattices, where the sign reversal of magnetic moments leads to constructive torques in the beginning and balanced torques in the end. In addition, we show that the easy-plane anisotropy plays a key role in the switching, which has been ignored in some previous works. The uniform magnetic dynamics in this work provides a clear physical picture in understanding the SOT switching of NiO. Furthermore, the electrical writing and reading function in our device advances the development of AFM-MRAM.