标题： 用六方氮化硼作为介质的忆阻器件可变性的建模 显示英文标题

标题： Modeling the variability of memristive devices with hexagonal boron nitride as dielectric

摘要： 基于h-BN电介质的忆阻器件的可变性得到了深入研究。 描述了不同的数值技术来提取复位电压，并通过方差系数表征相应的周期间可变性。 电荷-通量域被用于开发其中一种提取技术，通过计算电流和电压的积分以获得电荷和通量，可以最小化电噪声和电阻开关固有的随机性对测量数据的影响。 一个用于再现电荷与通量曲线的模型已被成功应用。 通过时间序列分析描述了器件的可变性，以评估电阻开关序列中的记忆效应。 最后，我们利用基于电路断路器的模拟器分析了在斜坡电压应力下的I-V曲线，研究了构成导电纳米丝的渗流路径的形成和断裂，以描述电阻开关操作背后的置位和复位过程。 显示英文摘要

摘要： Variability in memristive devices based on h-BN dielectrics is studied in depth. Different numerical techniques to extract the reset voltage are described and the corresponding cycle-to-cycle variability is characterized by means of the coefficient of variance. The charge-flux domain was employed to develop one of the extraction techniques, the calculation of the integrals of current and voltage to obtain the charge and flux allows to minimize the effects of electric noise and the inherent stochasticity of resistive switching on the measurement data. A model to reproduce charge versus flux curves has been successfully employed. The device variability is also described by means of the time series analysis to assess the memory effect along a resistive switching series. Finally, we analyzed I-V curves under ramped voltage stress utilizing a simulator based on circuit breakers, the formation and rupture of the percolation paths that constitute the conductive nanofilaments is studied to describe the set and reset processes behind the resistive switching operation.