标题： 空位相关发射器在六方氮化硼中的电流增强效应 显示英文标题

标题： Current-induced brightening of vacancy-related emitters in hexagonal boron nitride

摘要： 我们在六方氮化硼（hBN）中具有空位相关的发射器上进行光致发光测量，这些发射器以低量子产率而闻名。 通过少层石墨烯电极对这些发射器进行栅控，显示出可重复的、与栅极相关的发射器变亮现象，这与同时测量的穿过hBN层的泄漏电流方向的变化相一致。 同时，我们观察到变亮效应的相对增加与激发激光的强度成线性比例。 这两个观察结果可以用光辅助电致发光效应来解释。 有趣的是，发射器也可以表现出相反的行为，即发射器强度的降低，这取决于栅漏电流。 我们用hBN中施主态和受主态的不同浓度来解释这两种相反的行为，并表明精确控制hBN的掺杂是通过电学手段控制空位相关发射器亮度所必需的。 我们的发现有助于更深入地理解hBN中的空位相关缺陷，这对于利用它们在量子信息处理中的潜力是必要的。 显示英文摘要

摘要： We perform photoluminescence measurements on vacancy-related emitters in hexagonal boron nitride (hBN) that are notorious for their low quantum yields. The gating of these emitters via few-layer graphene electrodes reveals a reproducible, gate-dependent brightening of the emitter, which coincides with a change in the direction of the simultaneously measured leakage current across the hBN layers. At the same time, we observe that the relative increase of the brightening effect scales linearly with the intensity of the excitation laser. Both observations can be explained in terms of a photo-assisted electroluminescence effect. Interestingly, emitters can also show the opposite behavior, i.e. a decrease in emitter intensity that depends on the gate leakage current. We explain these two opposing behaviors with different concentrations of donor and acceptor states in the hBN and show that precise control of the doping of hBN is necessary to gain control over the brightness of vacancy-related emitters by electrical means. Our findings contribute to a deeper understanding of vacancy-related defects in hBN that is necessary to make use of their potential for quantum information processing.