标题： 一种制备与CMOS后端工艺兼容的固态纳米孔器件的方法 显示英文标题

标题： A Method for Fabricating CMOS Back-End-of-Line-Compatible Solid-State Nanopore Devices

摘要： 固态纳米孔，即在薄的自支撑膜上的纳米级孔洞，是强大的单分子传感器，能够检测从小型分子到大聚合物的各种目标分析物。有趣的是，由于其高空间分辨率，纳米孔还可以识别长聚合物上的标记，使其成为分子信息存储策略中读取元件的有吸引力的选择。然而，为了充分利用固态纳米孔的紧凑和坚固特性，它们需要以高度并行的方式封装，并具备片上电子信号处理能力，以快速且准确地处理生成的数据。此外，膜本身必须具有特定的物理、化学和电学特性，以确保达到足够的信噪比，传统膜材料为SiNx。不幸的是，典型的沉积方法，低压蒸气沉积，需要的温度超过了CMOS后端工艺的热预算，限制了生成片上解决方案的潜力。为此，我们探索了各种低温沉积技术，这些技术与BEOL兼容，用于生成用于固态纳米孔的SiNx膜，并成功展示了这些替代方法生成低噪声纳米孔的能力，这些纳米孔能够进行单分子实验。 显示英文摘要

摘要： Solid-state nanopores, nm-sized holes in thin, freestanding membranes, are powerful single-molecule sensors capable of interrogating a wide range of target analytes, from small molecules to large polymers. Interestingly, due to their high spatial resolution, nanopores can also identify tags on long polymers, making them an attractive option as the reading element for molecular information storage strategies. To fully leverage the compact and robust nature of solid-state nanopores, however, they will need to be packaged in a highly parallelized manner with on-chip electronic signal processing capabilities to rapidly and accurately handle the data generated. Additionally, the membrane itself must have specific physical, chemical, and electrical properties to ensure sufficient signal-to-noise ratios are achieved, with the traditional membrane material being SiNX . Unfortunately, the typical method of deposition, low-pressure vapour deposition, requires temperatures beyond the thermal budget of CMOS back-end-of-line integration processes, limiting the potential to generate an on-chip solution. To this end, we explore various lower-temperature deposition techniques that are BEOL-compatible to generate SiNx membranes for solid-state nanopore use, and successfully demonstrate the ability for these alternative methods to generate low-noise nanopores that are capable of performing single-molecule experiments.