标题： 钯/铋$_2$Se$_3$界面由于自形成的 PdBiSe 中间层而出现超导性 显示英文标题

标题： Superconductivity at Pd/Bi$_2$Se$_3$ Interfaces Due to Self-Formed PdBiSe Interlayers

摘要： 理解金属和拓扑绝缘体界面处的物理和化学过程对于开发下一代拓扑量子器件至关重要。 在这里，我们报告了通过在Bi$_2$Se$_3$表面溅射Pd制成的Pd/Bi$_2$Se$_3$二元层中发现的强健超导性。 通过透射电子显微镜测量，我们确定观察到的界面超导性起源于Pd向Bi$_2$Se$_3$的扩散。 在扩散区域，Pd与Bi$_2$Se$_3$化学反应并形成一层PdBiSe，这是一种已知的超导体，体转变温度为1.5 K。我们的工作提供了一种将超导性引入Bi$_2$Se$_3$的方法，为开发复杂的Bi$_2$Se$_3$基拓扑器件奠定了基础。 显示英文摘要

摘要： Understanding the physical and chemical processes at the interface of metals and topological insulators is crucial for developing the next generation of topological quantum devices. Here we report the discovery of robust superconductivity in Pd/Bi$_2$Se$_3$ bilayers fabricated by sputtering Pd on the surface of Bi$_2$Se$_3$. Through transmission electron microscopy measurements, we identify that the observed interfacial superconductivity originates from the diffusion of Pd into Bi$_2$Se$_3$. In the diffusion region, Pd chemically reacts with Bi$_2$Se$_3$ and forms a layer of PdBiSe, a known su-perconductor with a bulk transition temperature of 1.5 K. Our work provides a method for in-troducing superconductivity into Bi$_2$Se$_3$, laying the foundation for developing sophisticated Bi$_2$Se$_3$-based topological devices.