标题： 基于新型二维单层半导体Bi₂O₂Se、InSe和MoSi₂N₄的晶体管用于增强逻辑密度扩展 显示英文标题

标题： Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling

摘要： 制造超短栅极长度的晶体管对缩小接触栅极间距有显著贡献。 这反过来在实现更小的标准逻辑单元以增强逻辑密度扩展中起着至关重要的作用。 当我们推动微型化的边界时，有趣的是，认为通过具有显著1纳米栅极长度的晶体管可能达到接触栅极间距的极限。 在这里，我们确定InSe、Bi2O2Se和MoSi2N4作为1纳米晶体管的潜在二维半导体，具有低接触电阻和出色的界面特性。 我们采用从第一性原理计算开始的完全自洽的弹道量子输运模型。 我们的模拟显示，静电效应和量子隧穿之间的相互作用影响了这些器件在器件设计空间中的性能。 MoSi2N4沟道对量子隧穿具有最好的免疫能力，而Bi2O2Se沟道器件具有最好的静电特性。 我们表明，对于12纳米的沟道长度，所有器件都可以提供I_$ON$/I_$OFF$ > 10^3 ，适用于电子应用，而Bi2O2Se是性能最佳的沟道材料。 显示英文摘要

摘要： Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for enhanced logic density scaling. As we push the boundaries of miniaturization, it is intriguing to consider that the ultimate limit of contacted gate pitch could be reached with remarkable 1 nm gate-length transistors. Here, we identify InSe, Bi2O2Se, and MoSi2N4 as potential two-dimensional semiconductors for 1 nm transistors with low contact resistance and outstanding interface properties. We employ a fully self-consistent ballistic quantum transport model starting from first-principle calculations. Our simulations show that the interplay between electrostatics and quantum tunneling influences the performance of these devices over the device design space. MoSi2N4 channels have the best immunity to quantum tunneling, and Bi2O2Se channel devices have the best electrostatics. We show that for a channel length of 12 nm, all the devices can deliver I_$ON$/I_$OFF$ > 10^3 , suitable for electronic applications, and Bi2O2Se is the best-performing channel material.