标题： 拓扑结构与电子-电子相互作用在莫尔MoTe$_{\mathrm{2}}$/WSe$_{\mathrm{2}}$异质结中的相互作用 显示英文标题

标题： Interplay between topology and electron-electron interactions in the moiré MoTe$_{\mathrm{2}}$/WSe$_{\mathrm{2}}$ heterobilayer

摘要： 我们研究了莫尔结构MoTe\(_2\)/WSe\(_2\)异质结中拓扑与电子-电子相互作用之间的相互作用。 在我们的分析中，我们应用了一个包含复数跃迁的有效两带模型，该模型包含了类似伊辛的自旋轨道耦合，并在施加垂直电场（位移场）后导致非平凡的拓扑性。 该模型补充了局域和非局域库仑排斥项，并通过哈特里-福克方法和古茨维勒方法进行处理。 根据我们的分析，对于每个莫尔晶胞一个空穴的情况，随着位移场的增加，系统会发生两次相变。 第一次是从平面内的120$^\circ$反铁磁电荷转移绝缘体转变为拓扑绝缘体。 在第二次相变中，系统变为拓扑平凡，并且出现垂直方向的铁磁金属相。 在拓扑区域会出现自发的自旋极化，空穴分布在两个层中。 此外，我们分析了非局域库仑排斥项对拓扑相出现以及电荷密度波态形成的影响。 我们结合现有的实验数据讨论了所得结果。 显示英文摘要

摘要： We study, the interplay between topology and electron-electron interactions in the moir\'{e} MoTe\(_2\)/WSe\(_2\) heterobilayer. In our analysis we apply an effective two-band model with complex hoppings that incorporates the Ising-type spin-orbit coupling and lead to a non-trivial topology after the application of perpendicular electric field (displacement field). The model is supplemented by on-site and inter-site Coulomb repulsion terms and treated by both Hartree-Fock and Gutzwiller methods. According to our analysis, for the case of one hole per moir\'{e} unit cell, the system undergoes two phase transitions with increasing displacement field. The first one is from an in-plane 120$^\circ$ antiferromagnetic charge transfer insulator to a topological insulator. At the second transition, the system becomes topologically trivial and an out-of-plane ferrimagnetic metallic phase becomes stable. In the topological region a spontaneous spin-polarization appears and the holes are distributed in both layers. Additionally, we analyze the influence of the intersite Coulomb repulsion terms on the appearance of the topological phase as well as on the formation of the charge density wave state. We discuss the obtained results in the context of available experimental data.