标题： 栅控量子点中少电子区域的有效调制方法 显示英文标题

标题： Effective tuning methods for few-electron regime in gate-defined quantum dots

摘要： 我们提出了系统的方法来补偿门定义量子点（QDs）中的门串扰效应，以允许从少电子区域（N = 1）到 N\approx 20 观察库仑阻塞峰。 门串扰是指对一个门电压的调整无意中影响其他门控制的参数，这使得难以单独控制量子点的隧穿速率和能态。 为了克服这种串扰效应，我们提出了两种方法：通过补偿控制门电压对量子点接触（QPCs）的影响，保持形成量子点的两个量子点接触的导电性恒定，以及在几个电子数下优化量子点观测的门电压条件之间进行插值。 这些方法通过根据控制门电压动态调整屏障门电压来最小化串扰效应。 使用这些方法，我们成功地在整个范围从 N = 1 到 N\approx 20 观察到了库仑阻塞峰。 我们的方法提供了一种简单有效的解决方案，在保持对量子点中量子态的控制的同时，能够在广泛的电子数范围内观察库仑阻塞峰。 显示英文摘要

摘要： We present systematic methods for compensating gate crosstalk effects in gate-defined quantum dots (QDs), to allow the observation of Coulomb blockade peaks from the few-electron regime (N = 1) to N \approx 20. Gate crosstalk, where adjustments to one gate voltage unintentionally affect other gate-controlled parameters, makes it difficult to control tunneling rates and energy states of the QD separately. To overcome this crosstalk effect, we present two approaches: maintaining constant conductance of two quantum point contacts (QPCs) forming the QD by compensating the effect of the plunger gate voltage on the QPCs, and interpolating between gate voltage conditions optimized for QD observation at several electron numbers. These approaches minimize crosstalk effects by dynamically adjusting barrier gate voltages as a function of plunger gate voltage. Using these methods, we successfully observed Coulomb blockade peaks throughout the entire range from N = 1 to N \approx 20. Our methods provide a simple and effective solution for observing Coulomb blockade peaks over a wide range of electron numbers while maintaining control over the quantum states in the dot.