标题： 用于通过气相氢氟酸制备原子级清洁的 Si(100) 和 SiGe(100) 表面的低温工艺 显示英文标题

标题： A reduced-temperature process for preparing atomically clean Si(100) and SiGe(100) surfaces with vapor HF

摘要： 硅加工技术，如原子精度先进制造（APAM）和外延生长，需要表面处理以激活氧化物脱附（通常>1000 $^{\circ}$C）并促进表面重构，向原子清洁、平坦和有序的Si(100)-2$\times$1方向发展。我们比较了水相和气相清洁Si和Si/SiGe表面的方法，以在较低温度下制备APAM可用和外延可用的表面。角度分辨X射线光电子能谱（ARXPS）和傅里叶变换红外（FTIR）光谱表明，气相氢氟酸（VHF）清洁显著减少了碳表面污染，并允许化学处理后的表面在较低温度下重构，对于Si为600 $^{\circ}$C，对于Si/Si$_{0.7}$Ge$_{0.3}$异质结构为580 $^{\circ}$C，这由扫描隧道显微镜（STM）显示的有序原子平台结构所指示。经过热处理和真空氢终止后，我们在VHF处理的Si样品上展示了STM氢脱附光刻（HDL），创建了反应区域，使用类似于CMOS工艺流程的热预算实现区域选择性化学反应。我们预计这些结果将为将APAM与硅代工工艺集成开辟新的途径。 显示英文摘要

摘要： Silicon processing techniques such as atomic precision advanced manufacturing (APAM) and epitaxial growth require surface preparations that activate oxide desorption (typically >1000 $^{\circ}$C) and promote surface reconstruction toward atomically-clean, flat, and ordered Si(100)-2$\times$1. We compare aqueous and vapor phase cleaning of Si and Si/SiGe surfaces to prepare APAM-ready and epitaxy-ready surfaces at lower temperatures. Angle resolved X-ray photoelectron spectroscopy (ARXPS) and Fourier transform infrared (FTIR) spectroscopy indicate that vapor hydrogen fluoride (VHF) cleans dramatically reduce carbon surface contamination and allow the chemically prepared surface to reconstruct at lower temperatures, 600 $^{\circ}$C for Si and 580 $^{\circ}$C for a Si/Si$_{0.7}$Ge$_{0.3}$ heterostructures, into an ordered atomic terrace structure indicated by scanning tunneling microscopy (STM). After thermal treatment and vacuum hydrogen termination, we demonstrate STM hydrogen desorption lithography (HDL) on VHF-treated Si samples, creating reactive zones that enable area-selective chemistry using a thermal budget similar to CMOS process flows. We anticipate these results will establish new pathways to integrate APAM with Si foundry processing.