标题： 应变增强的碳化硅中钒量子位的控制 显示英文标题

标题： Strain-enabled control of the vanadium qudit in silicon carbide

摘要： 钒在碳化硅中是一种有前景的自旋光子接口候选材料，在电信范围内具有光学跃迁和长寿命的电子自旋，它位于先进的半导体平台中。 在这项对缺陷在毫开尔文温度下的16维基态自旋流形的详细研究中，观察到了一系列此前未报告的跃迁，这些跃迁通过一个包含应变的理论模型得到了准确描述。 使用超导微线圈，我们实现了超过20 MHz的拉比频率，并首次对直接超精细跃迁进行了相干操控。 这些见解进一步强调了该缺陷在应变工程和传感以及容错量子位编码方面的潜力。 显示英文摘要

摘要： Vanadium in silicon carbide is a promising spin photon interface candidate with optical transitions in the telecom range and a long lived electron spin, hosted in an advanced semiconductor platform. In this detailed investigation of the defect's 16-dimensional ground state spin manifold at millikelvin temperatures, a wide range of previously unreported transitions are observed which are accurately described using a theoretical model that includes strain. Using a superconducting microcoil we achieve Rabi frequencies exceeding 20 MHz and perform the first coherent manipulation of a direct hyperfine transition. These insights further underscore the defect's potential for strain engineering and sensing, as well as for fault-tolerant qudit encoding.