标题： 无疲劳铁电性在通过界面设计的Hf0.5Zr0.5O2超薄薄膜中 显示英文标题

标题： Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design

摘要： 由于CMOS兼容性和可扩展性，基于HfO2的铁电体是下一代存储器件的有前途的候选材料。 然而，其商业化受到可靠性问题的严重阻碍，其中疲劳是一个主要障碍。 我们报告了在界面设计的Hf0.5Zr0.5O2基异质结构中的无疲劳行为。 构建了一个共格的CeO2-x/Hf0.5Zr0.5O2异质界面，其中CeO2-x作为氧海绵，能够可逆地接受和释放氧空位。 这种设计有效缓解了电极-铁电界面处的缺陷聚集，从而提高了开关特性。 此外，设计了一种对称电容器结构以最小化印记，从而抑制循环引起的定向缺陷漂移。 这两种方法减轻了氧伏安法产生的化学/能量波动，抑制了顺电相的形成和极化退化。 该设计确保了无疲劳特性超过10^11次开关循环，并且Hf0.5Zr0.5O2基电容器的耐久寿命超过10^12次循环，同时还具有优异的温度稳定性和保持性。 这些发现为开发超稳定的铪基铁电器件铺平了道路。 显示英文摘要

摘要： Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectrics are promising candidates for next-generation memory devices. However, their commercialization has been greatly hindered by reliability issues, with fatigue being a major impediment. We report the fatigue-free behavior in interface-designed Hf0.5Zr0.5O2-based heterostructures. A coherent CeO2-x/Hf0.5Zr0.5O2 heterointerface is constructed, wherein CeO2-x acts as an oxygen sponge, capable of reversibly accepting and releasing oxygen vacancies. This design effectively alleviates defect aggregation at the electrode-ferroelectric interface, enabling improved switching characteristics. Further, a symmetric capacitor architecture is designed to minimize the imprint, thereby suppressing the cycling-induced oriented defect drift. The two-pronged technique mitigates oxygen-voltammetry-generated chemical/energy fluctuations, suppressing the formation of paraelectric phase and polarization degradation. The design ensures a fatigue-free feature exceeding 10^11 switching cycles and an endurance lifetime surpassing 10^12 cycles for Hf0.5Zr0.5O2-based capacitors, along with excellent temperature stability and retention. These findings pave the way for developing ultra-stable hafnia-based ferroelectric devices.