标题： 基于镍掺杂ZnO/p-Si异质结的自供电光电探测器材料的制备 显示英文标题

标题： Fabrication of self-powered photodetector materials based on Ni-doped ZnO/p-Si heterojunctions

摘要： 在本文中，Ni掺杂的ZnO薄膜通过喷雾热解法生长在p型硅基底上。通过调整乙酸锌二水合物（ZAD）和氯化镍六水合物（NCH）之间的重量比来改变Ni掺杂浓度，从而得到ZnO、ZnO:Ni1%和ZnO:Ni3%样品。场效应扫描电子显微镜（FESEM）图像显示，Ni掺杂显著将纳米结构尺寸从326 nm（ZnO）减少到146 nm（ZnO:Ni3%）。同样，X射线衍射（XRD）分析也显示随着Ni掺杂的增加，晶体粒径减小，从44 nm（ZnO）减小到35 nm（ZnO:Ni3%）。在偏置电压为0 V和5 V下进行了电流-电压（I-V）测量，以检查电学和自供电光电检测特性。所有样品均表现出自供电光电探测器性能。在0 V偏置下，未掺杂的ZnO的光暗电流比（162）高于ZnO:Ni1%（18）和ZnO:Ni3%（16）。与纯ZnO（上升时间为10.8 s，下降时间为9.1 s）相比，ZnO:Ni3%样品的上升时间（0.4 s）和下降时间（1.7 s）更快，突显了其在需要快速光电响应的应用中的潜力。这些发现为通过控制Ni掺杂优化基于ZnO的光电探测器性能提供了有价值的见解，有助于推动用于节能光电设备的自供电光电检测技术的发展。 显示英文摘要

摘要： In this paper, Ni-doped ZnO films were grown on a p-type silicon substrate via spray pyrolysis. The Ni dopant concentrations were varied by adjusting the weight ratio between Zinc Acetate Dehydrate (ZAD) and Nickel Chloride Hexahydrate (NCH), resulting in the ZnO, ZnO:Ni1%, and ZnO:Ni3% samples. Field-effect scanning electron microscopy (FESEM) images revealed that Ni doping significantly reduced the nanostructure size from 326 nm (ZnO) to 146 nm (ZnO:Ni3%). Similarly, X-ray diffraction (XRD) analysis also shows the decrease of the crystallite size with increasing Ni doping, from 44 nm (ZnO) to 35 nm (ZnO:Ni3%). Current-voltage (I-V) measurements were conducted at a bias voltage of 0 and 5 V to examine electrical and self-powered photodetection properties. All samples demonstrate self-powered photodetector performance. At the bias of 0 V, the undoped ZnO exhibited a higher photo-to-dark-current ratio (162) as compared to ZnO:Ni1% (18) and ZnO:Ni3% (16). The ZnO:Ni3% samples displayed faster rise (0.4 s) and fall times (1.7 s) as compared to the pure ZnO (10.8 s for rise time and 9.1 s for fall time), highlighting their potential for applications requiring rapid photoresponse. The findings provide valuable insights into optimizing the performance of ZnO-based photodetectors through controlled Ni doping, enabling advancements in self-powered photodetection technology for energy-efficient optoelectronic devices.