标题： 中子辐照的8英寸p型硅晶圆二极管电荷收集的退火行为 显示英文标题

标题： Annealing behaviour of charge collection of neutron irradiated diodes from 8-inch p-type silicon wafers

摘要： 为应对高亮度LHC期间总亮度增加10倍带来的更高辐射水平，CMS探测器将使用高粒度量能器（HGCAL）概念替换当前的量能器端盖（CE）。CE的电磁部分以及强辐射区域的强子部分将配备硅垫片传感器，覆盖总面积为620 $\rm m^2$。 考虑到总亮度为3 $\rm ab^{-1}$，预计通量可达 $\rm1.0\cdot10^{16}~n_{eq}/cm^{2}$且剂量可达2 MGy。 整个CE通常在-35{\deg }C下运行，以减轻辐射损伤的影响。 硅传感器是在新型8英寸p型晶圆上加工而成，活性厚度为300 $\mu m$、200 $\mu m$和120 $\mu m$，并切割成六边形形状，以最优利用晶圆面积和拼接。 每个主传感器上都配有多个小型测试结构（例如垫片二极管），用于质量保证和辐射硬度测试。 为了研究辐射引起的体损伤，这些二极管已在JSI（Jožef Stefan研究所，卢布尔雅那）的TRIGA反应堆中用反应堆中子辐照到13个通量，介于$\rm6.5\cdot10^{14}~n_{eq}/cm^{2}$和$\rm1.5\cdot10^{16}~n_{eq}/cm^{2}$之间。 辐照后的硅二极管的电荷收集通过瞬态电流技术（TCT）测量确定。 该研究重点是体材料在60{\deg }摄氏度下的等温退火行为。这些结果已被用来扩展在预期更高通量区域使用更厚硅传感器的适用性，并用于估计在年底技术停机期间以及目前预计温度约为0{\deg }摄氏度的长时间HL-LHC停机期间硅传感器的预期退火效应。 显示英文摘要

摘要： To face the higher levels of radiation due to the 10-fold increase in integrated luminosity during the High-Luminosity LHC, the CMS detector will replace the current Calorimeter Endcap (CE) using the High-Granularity Calorimeter (HGCAL) concept. The electromagnetic section as well as the high-radiation regions of the hadronic section of the CE will be equipped with silicon pad sensors, covering a total area of 620 $\rm m^2$. Fluences up to $\rm1.0\cdot10^{16}~n_{eq}/cm^{2}$ and doses up to 2 MGy are expected considering an integrated luminosity of 3 $\rm ab^{-1}$. The whole CE will normally operate at -35{\deg}C in order to mitigate the effects of radiation damage. The silicon sensors are processed on novel 8-inch p-type wafers with an active thickness of 300 $\mu m$, 200 $\mu m$ and 120 $\mu m$ and cut into hexagonal shapes for optimal use of the wafer area and tiling. With each main sensor several small sized test structures (e.g pad diodes) are hosted on the wafers, used for quality assurance and radiation hardness tests. In order to investigate the radiation-induced bulk damage, these diodes have been irradiated with reactor neutrons at the TRIGA reactor in JSI (Jo\v{z}ef Stefan Institute, Ljubljana) to 13 fluences between $\rm6.5\cdot10^{14}~n_{eq}/cm^{2}$ and $\rm1.5\cdot10^{16}~n_{eq}/cm^{2}$. The charge collection of the irradiated silicon diodes was determined through transient current technique (TCT) measurements. The study focuses on the isothermal annealing behaviour of the bulk material at 60{\deg}C. The results have been used to extend the usage of thicker silicon sensors in regions expecting higher fluences and are being used to estimate the expected annealing effects of the silicon sensors during year-end technical stops and long HL-LHC shutdowns currently foreseen with a temperature around 0{\deg}C.