标题： 具有交错磁通的平方晶格模型：零陈数拓扑态和拓扑平带 显示英文标题

标题： Square lattice model with staggered magnetic fluxes: zero Chern number topological states and topological flat bands

摘要： 交错磁通 (SMF) 在实现陈绝缘体 (CIs) 中起着关键作用，通过这种方式在各种晶格上建立了系列 CI 模型。 此外，已报道在晶格模型中 SMF 可以诱导出高阶拓扑绝缘体 (HOTI)。 在本工作中，我们提出一个具有 SMF 的正方晶格模型。 我们发现细胞内 SMF 可以在四分之一填充时诱导出零陈数拓扑绝缘体 (ZCNTI)，该绝缘体具有由量化极化所表征的拓扑保护边缘态，类似于二维 Su-Schrieffer-Hegger 模型中的拓扑态。 当引入晶格二聚化和细胞内 SMF 时，在半填充情况下存在 HOTI 态。 此外，通过考虑次近邻跃迁，该模型可以产生拓扑平带 (TFB)。 当硬核玻色子填充到此 TFB 模型中时，研究了几种分数陈绝缘体态。 显示英文摘要

摘要： Staggered magnetic fluxes (SMF) play a crucial role in achieving Chern insulators (CIs), by which a series of CI models have been established on various lattices. In addition, SMF induced higher-order topological insulator (HOTI) in a lattice model has been reported. In this work, we propose a square lattice model with SMF. We find intracellular SMF can induce zero-Chern-number topological insulator (ZCNTI) at quarter filling which hosts topologically protected edge states characterized by the quantized polarization, in analogy to the topological state in two dimensional Su-Schrieffer-Hegger model. When lattice dimerization and intracellular SMF are introduced, there exists HOTI state at half filling. Furthermore, this model hosts topological flat band (TFB) by considering the next-nearest-neighbor hoppings. Several fractional Chern insulator states are investigated when hard-core bosons are filled into this TFB model.