标题： 混合堆叠MnBi$_2$Te$_4$薄膜中的高 Chern 数量子反常霍尔绝缘体 显示英文标题

标题： High-Chern-number Quantum anomalous Hall insulators in mixing-stacked MnBi$_2$Te$_4$ thin films

摘要： 量子反常霍尔（QAH）绝缘体的特征是在无外加磁场的情况下纵向电阻消失且霍尔电阻呈现量子化。其中，高Chern数QAH绝缘体提供了多个非耗散电流通道，在低功耗电子器件的发展中至关重要。通过第一性原理计算，我们提出可以通过混合堆叠顺序的组合，在MnBi$_2$Te$_4$（MBT）多层膜中实现高Chern数（$C>1$）QAH绝缘体，而无需额外的缓冲层。通过计算实空间分辨的异常霍尔电导率（AHC），验证了这一物理机制。局部AHC主要集中在具有连续正确堆叠顺序的区域，这有助于准量子化的AHC。相反，具有连续错误堆叠顺序的区域对总AHC的贡献极小，这可以归因于不同堆叠配置中的层间耦合差异。我们的工作为实现大Chern数的设计原则提供了宝贵的见解，并强调了堆叠配置在调控MBT薄膜及其衍生物的电子和拓扑性质中的作用。 显示英文摘要

摘要： Quantum anomalous Hall (QAH) insulators are characterized by vanishing longitudinal resistance and quantized Hall resistance in the absence of an external magnetic field. Among them, high-Chern-number QAH insulators offer multiple nondissipative current channels, making them crucial for the development of low-power-consumption electronics. Using first-principles calculations, we propose that high-Chern-number ($C>1$) QAH insulators can be realized in MnBi$_2$Te$_4$ (MBT) multilayer films through the combination of mixed stacking orders, eliminating the need for additional buffer layers. The underlying physical mechanism is validated by calculating real-space-resolved anomalous Hall conductivity (AHC). Local AHC is found to be predominantly located in regions with consecutive correct stacking orders, contributing to quasi-quantized AHC. Conversely, regions with consecutive incorrect stacking contribute minimally to the total AHC, which can be attributed to the varied interlayer coupling in different stacking configurations. Our work provides valuable insights into the design principle for achieving large Chern numbers, and highlights the role of stacking configurations in manipulating electronic and topological properties in MBT films and its derivatives.