标题： 滑动和扭曲：在多层六方氮化硼中操控偏振 显示英文标题

标题： Slide and Twist: Manipulating Polarization in Multilayer Hexagonal Boron-Nitride

摘要： 本研究探讨了多层六方氮化硼（hBN）和氮化镓（hGaN）中跨层滑动铁电性的世界，旨在控制面外极化。 通过研究在不同hBN堆叠配置中滑动单层或双层的影响，我们发现了可以反转极化的手段，其能量势垒在5至30 meV/f.u.之间，使这些手段具有实验可行性。 我们的结果表明，单界面滑动更具能量优势，其势垒低于多个界面。 某些路径显示出稳定的极化平台，在特定滑动阶段极化保持恒定，有望实现稳健的极化控制。 此外，旋转的多层结构在不同旋转角度下保持一致的净面外极化。 在三层ABT结构中，旋转顶层并滑动底层可以反转极化，扩展了器件设计的可能性。 尽管主要关注hBN，但hGaN中的类似现象表明，这类极性材料具有更广泛的应用前景。 所确定的能量势垒支持基于这些多层结构制造器件的可行性。 显示英文摘要

摘要： This study explores the world of across-layer sliding ferroelectricity in multilayer hexagonal boron nitride (hBN) and gallium nitride (hGaN), aiming to control out-of-plane polarization. By investigating the effects of sliding single or dual layers in various hBN stacking configurations, we uncover methods for reversing polarization with energy barriers between 5 and 30 meV/f.u., making these methods experimentally viable. Our results show that single-interface sliding is more energetically favorable, with lower barriers compared to multiple interfaces. Certain pathways reveal stable polarization plateaus, where polarization remains constant during specific sliding phases, promising robust polarization control. Moreover, rotated multilayer structures maintain consistent net out-of-plane polarization across different rotation angles. In trilayer ABT structures, rotating the top layer and sliding the bottom layer can reverse polarization, expanding device design possibilities. While the primary focus is on hBN, similar phenomena in hGaN suggest broader applicability for this class of polar materials. The identified energy barriers support the feasibility of fabricating devices based on these multilayer structures.