标题： 超紧凑氮化硅器件用于高密度集成 显示英文标题

标题： Ultra-Compact Silicon Nitride Devices for High-Density Integration

摘要： 集成的光子器件由氮化硅（SiN）制成，可以与绝缘体上的硅和III-V平台集成，有望推动硅光子技术的扩展。 与其它平台相比，SiN 提供了更低的传播损耗和更宽的透明窗口，使得关键光子器件，包括滤波器、复用器、高Q谐振器和非线性组件，能够取得显著进步。 然而，SiN 相对较低的折射率对比度通常被认为是制造紧凑且高效器件的限制因素。 在此，我们展示了三种基本器件：粗波分复用器、五模模式复用器和偏振光束分裂器，所有这些器件都具有极其紧凑的尺寸。 通过实现器件尺寸缩小高达1200倍，本工作证明了在不牺牲性能的情况下显著提高氮化硅芯片中的组件密度的可能性。 这些结果显示，逆向设计技术可以在SiN平台上实现最先进的性能。 显示英文摘要

摘要： Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon on insulator and III V platforms, are expected to drive the expansion of silicon photonics technology. SiN offers lower propagation losses and a broad transparency window compared to other platforms, enabling substantial advancements in key photonic devices, including filters, multiplexers, high Q resonators, and nonlinear components. However, the relatively low refractive index contrast of SiN is often considered a limitation for creating compact and efficient devices. Herein, we present three fundamental devices: a coarse wavelength division multiplexer, a five mode mode division multiplexer, and a polarization beam splitter, all with extremely compact footprints. By achieving a reduction in device footprint of up to 1200 times, this work demonstrates the potential for significantly enhancing component density in silicon nitride chips without sacrificing performance. These results show that inverse design techniques can yield state of the art performance on the SiN platform.