标题： 电场偏置双层石墨烯能隙的筛选：从Hartree到Hartree-Fock 显示英文标题

标题： Screening of the band gap in electrically biased bilayer graphene: From Hartree to Hartree-Fock

摘要： 众所周知，通过施加垂直电场（偏置），双层石墨烯中可以打开一个直接带隙。 偏置和化学势通过静电门控来控制，其中顶栅和底栅电压分别调节。 由偏置场打开的带隙值受到双层石墨烯自屏蔽的影响。 文献中广泛了解的是哈特里自屏蔽的贡献， 哈特里屏蔽显著地重整化了带隙。 在目前的工作中，我们推导出自屏蔽的福克贡献，并证明它同样重要，在低密度区域甚至比哈特里贡献更重要。 我们在零温下计算电子掺杂作为函数的哈特里-福克屏蔽带隙，以及在零掺杂情况下温度作为函数的哈特里-福克屏蔽带隙。 显示英文摘要

摘要： It is well known that a direct band gap may be opened in bilayer graphene via the application of a perpendicular electric field (bias). The bias and the chemical potential are controlled by electrostatic gating where the top and bottom gate voltages are tuned separately. The value of the band gap opened by the bias field is influenced by the self screening of the bilayer graphene. The Hartree contribution to the self screening is well known in literature, with Hartree screening significantly renormalizing the gap. In the present work we derive the Fock contribution to the self screening and demonstrate that it is equally important and in the low density regime even more important than the Hartree contribution. We calculate the Hartree-Fock screened band gap as a function of electron doping at zero temperature and also as a function of temperature at zero doping.