标题： 分数统计和拓扑缺陷处的电子转移 显示英文标题

标题： Fractional Statistics and Electron Transfer at Topological Defects

摘要： 我们发展了一个理论框架来研究石墨烯缺陷处的电子转移（ET），将表面视为具有局域缺陷态并与振动环境耦合的狄拉克锥。 通过结合极化子变换和修正后的态密度，我们推导出一个明确的电子转移速率表达式，该表达式包含了振动重构和分数量子点统计。 我们表明，通过幂律态密度建模的分数统计，在共振附近抑制低能电子转移，并引入与传统马库斯型动力学可调偏差。 我们的结果表明，应变、缺陷工程或化学修饰可以稳定基于石墨烯的催化剂中的分数激发，从而提供控制表面反应性的新策略。 这些发现为未来实验和计算研究拓扑结构和分数统计在化学电子转移中的作用奠定了基础。 显示英文摘要

摘要： We develop a theoretical framework for electron transfer (ET) at graphene defects, treating the surface as a Dirac cone with a localized defect state coupled to a vibrational environment. Using a polaron transformation combined with a modified density of states, we derive an explicit expression for the ET rate that incorporates both vibrational reorganization and fractionalized quasiparticle statistics. We show that fractional statistics, modeled through a power-law density of states, suppress low-energy ET near resonance and introduce tunable deviations from conventional Marcus-like kinetics. Our results suggest that strain, defect engineering, or chemical modification could stabilize fractional excitations in graphene-based catalysts, offering new strategies for controlling surface reactivity. These findings provide a foundation for future experimental and computational investigations into the role of topology and fractional statistics in chemical electron transfer.