标题： 通过柔性掺杂在范德华半导体中的双极掺杂 显示英文标题

标题： Bipolar doping in van der Waals semiconductor through Flexo-doping

摘要： 掺杂在功能化半导体器件中起着关键作用，但依赖于外来原子掺入的传统化学方法存在掺杂不对称性、明显的晶格无序和受限的横向分辨率。 在这里，我们展示了一种物理掺杂技术，可以直接在层状半导体（MoS2）中写入纳米尺度的掺杂图案。 通过使用原子力显微镜探针施加局部拉伸和压缩应力，在设计区域内以亚100纳米的分辨率同时写入p型和n型导电性，这通过空间分辨的电容和光电流实验得到了验证。 密度泛函理论计算揭示了由应变驱动的施主和受主能级的位移，高达几百meV，将机械应力与半导体掺杂联系起来。 制造的应变工程结能够有效整流电流并执行逻辑操作，具有稳定的动态响应。 这种应变驱动的方法能够在不破坏结晶性的情况下在范德华材料中实现空间精确的掺杂，为纳米尺度半导体器件提供了一个通用的平台。 显示英文摘要

摘要： Doping plays a key role in functionalizing semiconductor devices, yet traditional chemical approaches relying on foreign-atom incorporation suffer from doping-asymmetry, pronounced lattice disorder and constrained spatial resolution. Here, we demonstrate a physical doping technique to directly write nanoscale doping patterns into layered semiconductors (MoS2). By applying localized tensile and compressive stress via an atomic force microscopy probe, p and n type conductance are simultaneously written into the designed area with sub-100-nm resolution, as verified by spatially resolved capacitance and photocurrent experiments. Density functional theory calculations reveal strain-driven shifts of donor and acceptor levels, as large as several hundreds of meV, linking mechanical stress to semiconductor doping. Fabricated strain-engineered junction efficiently rectifies the current flow and performs logic operations with stable dynamic response. This strain-driven approach enables spatially precise doping in van der Waals materials without degrading crystallinity, offering a versatile platform for nanoscale semiconductor devices.