标题： 大尺寸外延 Fe3GaTe2/石墨烯范德瓦尔斯异质结构的室温铁磁性 显示英文标题

标题： Above-room-temperature ferromagnetism in large-area epitaxial Fe3GaTe2/graphene van der Waals heterostructures

摘要： Fe3GaTe2（FGaT），一种二维（2D）层状铁磁金属，表现出较高的居里温度（TC）约360 K以及强垂直磁各向异性（PMA），使其成为下一代节能磁性器件的有前景的材料候选者。然而，迄今为止，关于FGaT的大多数研究仅限于毫米级块状晶体和剥离的薄片，这些不适合实际应用和集成到器件工艺中。此外，它与其他2D材料结合形成范德瓦尔斯异质结构的方法仅通过薄片堆叠实现。因此，FGaT及其相关异质结构的大规模可控生长仍然未被充分探索。 在这项工作中，我们展示了使用分子束外延技术在单晶石墨烯/碳化硅模板上高质量大规模生长外延FGaT薄膜的突破。结构表征证实了连续FGaT/石墨烯范德瓦尔斯异质结构的高结晶质量。温度依赖的磁化和异常霍尔测量揭示了具有增强的TC远高于室温（最高可达400 K）的稳健垂直磁各向异性。此外，X射线吸收和X射线磁圆二色谱谱图提供了自旋和轨道磁矩贡献的见解，进一步验证了高的TC和稳健的PMA。这些发现对于基于2D异质结构的高性能自旋电子器件的未来发展具有重要意义，可能应用于下一代数据存储、逻辑处理和量子技术。 显示英文摘要

摘要： Fe3GaTe2 (FGaT), a two-dimensional (2D) layered ferromagnetic metal, exhibits a high Curie temperature (TC) ~ 360 K along with strong perpendicular magnetic anisotropy (PMA), making it a promising material candidate for next-generation energy-efficient magnetic devices. However, the vast majority of studies on FGaT to date have been limited to millimeter-sized bulk crystals and exfoliated flakes, which are unsuitable for practical applications and integration into device processing. Also, its combination with other 2D materials to form van der Waals heterostructures has only been achieved by flake stacking. Consequently, the controlled large-scale growth of FGaT and related heterostructures remains largely unexplored. In this work, we demonstrate a breakthrough in the high-quality, large-scale growth of epitaxial FGaT thin films on single-crystalline graphene/SiC templates using molecular beam epitaxy. Structural characterization confirms the high crystalline quality of the continuous FGaT/graphene van der Waals heterostructures. Temperature-dependent magnetization and anomalous Hall measurements reveal robust PMA with an enhanced TC well above room temperature, reaching up to 400 K. Furthermore, X-ray absorption and X-ray magnetic circular dichroism spectra provide insight into the spin and orbital magnetic moment contributions, further validating the high TC and robust PMA. These findings are highly significant for the future development of high-performance spintronic devices based on 2D heterostructures, with potential applications in next-generation data storage, logic processing and quantum technologies.