标题： 倒置HgTe纳米线的低能有效哈密顿量和端态 显示英文标题

标题： Low-energy effective Hamiltonian and end states of an inverted HgTe nanowire

摘要： 在圆柱形HgTe纳米线中，通过改变纳米线半径可以诱导带反转转变。 在这里，我们推导了描述HgTe纳米线在基本带隙附近的能带结构的低能有效哈密顿量。 由于当能隙闭合时，$E_{1}$和$H_{1}$子带对$k_{z}$具有二次依赖关系，因此在构建有效哈密顿量时，我们需要至少考虑三个子带，即$E_{1}$、$H_{1}$和$H_{2}$子带。 得到的有效哈密顿量是块对角的，每个块是一个$3\times3$矩阵。 当使用开放边界条件求解有效哈密顿量时，在反转区域发现了端态。 显示英文摘要

摘要： The band inversion transition in a cylindrical HgTe nanowire is inducible via varying the nanowire radius. Here we derive the low-energy effective Hamiltonian describing the band structure of the HgTe nanowire close to the fundamental band gap. Because both the $E_{1}$ and $H_{1}$ subbands have quadratic dependence on $k_{z}$ when the gap closes, we need to consider at least three subbands, i.e., the $E_{1}$, $H_{1}$, and $H_{2}$ subbands, in building the effective Hamiltonian. The resulted effective Hamiltonian is block diagonal and each block is a $3\times3$ matrix. End states are found in the inverted regime when we solve the effective Hamiltonian with open boundary condition.