标题： 二维电子流滑移流中的霍尔效应 显示英文标题

标题： Hall effect in slip flow of two-dimensional electron fluid

摘要： 霍尔效应在具有流体电子输运的高迁移率二维介观样品中与经典磁场下非耗散霍尔粘度的表现有关。 然而，后者可能被电子流通过狭窄区域的特定几何形状和边界效应所掩盖。 在本工作中，我们考虑了具有流体电子输运的窄通道的低场霍尔电阻率。 使用动力学理论，我们表明流体霍尔粘度贡献伴随着与二维电子流滑移中的Knudsen层形成相关的可比的弹道贡献。 研究的弹道修正在任何边界反射的镜面性下都存在，并降低了总负尺寸依赖修正对体霍尔电阻率的影响程度。 获得的总霍尔电阻率的解析表达式可用于估算高迁移率结构中的边界反射系数。 显示英文摘要

摘要： Hall effect in high-mobility 2D mesoscopic samples with hydrodynamic electron transport is related to manifestation of non-dissipative Hall viscosity at classical magnetic fields. However, the latter can be obscured by the particular geometry of the electronic flow through constriction and boundary effects. In this work we consider the low-field Hall resistivity of the narrow channel with hydrodynamic electron transport. Using kinetic theory we show that the hydrodynamic Hall viscosity contribution is accompanied by the comparable ballistic contribution associated with the formation of Knudsen layers in the slip flow of 2D electron fluid. The studied ballistic correction is present at any specularity of the boundary reflection and lowers the magnitude of the total negative size-dependent correction to the bulk Hall resistivity. The obtained analytic expression for the total Hall resistivity can be used to estimate the boundary reflection coefficient in high-mobility structures.