标题： 反铁磁性晶体管中的磁调制电开关 显示英文标题

标题： Magnetically Modulated Electrical Switching in an Antiferromagnetic Transistor

摘要： 自旋晶体管的一个版本，其中磁性被用来影响半导体的电学行为，在自旋电子学中一直是一个长期追求的设备概念。 在这项工作中，我们实验研究了一种场效应晶体管，其沟道材料采用CrSBr，这是一种范德瓦尔斯（vdW）反铁磁半导体。 与之前在vdW磁体中报告的平面电流弱磁调制不同，我们晶体管的沟道电流可以通过门电压和磁转变有效地调节，实现了高达1500%的磁阻比。 通过结合测量和理论建模，我们揭示了磁调制载流子浓度是大磁阻的起源。 在同一设备中使用磁有序性和电场来控制晶体管的ON/OFF状态的策略为内存、逻辑和磁传感应用开辟了节能自旋电子学的新途径。 显示英文摘要

摘要： A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr, a van der Waals (vdW) antiferromagnetic semiconductor, as the channel material. Unlike the weak magnetic tunability of in-plane currents previously reported in vdW magnets, the channel current of our transistor is efficiently tuned by both gate voltage and magnetic transitions, achieving a magnetoresistance ratio as high as 1500%. Combining measurement and theoretical modeling, we reveal magnetically modulated carrier concentration as the origin of the large magnetoresistance. The strategy of using both magnetic ordering and electric field in the same device to control ON/OFF states of a transistor opens a new avenue of energy-efficient spintronics for memory, logic and magnetic sensing applications.