标题： TiTe2点接触电导中电阻开关和二极管效应的观测 显示英文标题

标题： Observation of resistive switching and diode effect in the conductivity of TiTe2 point contacts

摘要： 我们测量了基于TiTe₂的点接触（PC）从室温到氦气温度下的I(V)和dV/dI(V)特性。检测到了表明电荷密度波（CDW）出现的特征，在液氦温度下，这些特征在约150 mV处的dV/dI(V)曲线中显示出对称于V=0的最大值，当温度超过150 K时消失，与姊妹化合物TiSe₂的情况类似。 施加高于200 mV的电压时，我们观察到TiTe₂ PC从金属态的低阻态切换到非金属态的高阻态，电阻变化了一个数量级。在TiTe₂ PC的“软”型中，在TiTe₂负电压下发现具有滞后性的I(V)曲线中记录到了独特的二极管效应。 发现电阻开关和二极管效应使TiTe₂成为过渡金属双硫属化物的一员，这对开发非易失性ReRAM和其他新兴纳米技术可能很有用。 显示英文摘要

摘要： We measured the I(V) and dV/dI(V) characteristics of TiTe2-based point contacts (PCs) from room to helium temperatures. Features indicating the emergence of a charge density wave (CDW) were detected. They represent symmetrical relatively V=0 maxima in dV/dI(V) around 150 mV at liquid helium temperatures, which disappear above 150 K, similar to the case of sister CDW compound TiSe2. Applying higher voltages above 200 mV, we observed resistive switching in TiTe2 PCs from a metallic-like low-resistance state to non-metallic type high-resistance state with a change of resistance by an order of magnitude. A unique diode-like effect was registered in "soft" TiTe2 PCs with hysteretic I(V) at negative voltage on TiTe2. Discovering the resistive switching and diode effect adds TiTe2 to the transition-metal dichalcogenides, which could be useful in developing non-volatile ReRAM and other upcoming nanotechnologies.