标题： 基于增益单元eDRAM的状态逻辑内存 显示英文标题

标题： Stateful Logic In-Memory Using Gain-Cell eDRAM

摘要： 现代数据密集型应用需要能够提供高密度、低功耗和集成计算能力的内存解决方案，以减少数据移动开销。 本文介绍了将增益单元嵌入式动态随机存取存储器（GC-eDRAM）——一种有吸引力的传统静态随机存取存储器和嵌入式动态随机存取存储器的替代方案——用于有状态的内存逻辑。 我们提出了一种电路设计，利用GC-eDRAM的双端口架构和非破坏性读取操作，在GC-eDRAM内存阵列内部直接执行逻辑功能。 我们的仿真结果表明，计算逻辑门时具有5微秒的保持时间以及99.5%的成功率。 通过将内存内处理（PIM）功能集成到GC-eDRAM中，我们的方法提高了内存和计算密度，降低了功耗，并提高了数据密集型应用的整体性能。 显示英文摘要

摘要： Modern data-intensive applications demand memory solutions that deliver high-density, low-power, and integrated computational capabilities to reduce data movement overhead. This paper presents the use of Gain-Cell embedded DRAM (GC-eDRAM) - a compelling alternative to traditional SRAM and eDRAM - for stateful, in-memory logic. We propose a circuit design that exploits GC-eDRAM's dual-port architecture and nondestructive read operation to perform logic functions directly within the GC-eDRAM memory array. Our simulation results demonstrate a 5us retention time coupled with a 99.5% success rate for computing the logic gates. By incorporating processing-in-memory (PIM) functionality into GC-eDRAM, our approach enhances memory and compute densities, lowers power consumption, and improves overall performance for data-intensive applications.