标题： 氮秒脉冲MHCD制备六方氮化硼薄膜：原位等离子体诊断和生长后薄膜表征 显示英文标题

标题： Hexagonal boron nitride thin film synthesis with a ns-pulsed MHCD: in-situ plasma diagnostics and post-growth film characterization

摘要： 六方氮化硼（h-BN）通过等离子体增强化学气相沉积（PECVD）沉积在Si <100>晶圆（$\approx$20 cm2）上，使用ns脉冲N2/Ar微空心阴极放电（MHCD）作为微等离子体源。 首次将氮化铝（AIN）用作MHCD中的介电材料，以减轻原子氧引起的薄膜污染，这是之前使用传统Al2O3介电材料时观察到的问题。 采用综合的多诊断方法对沉积的h-BN进行表征，包括拉曼光谱、扫描电子显微镜（SEM）、原子力显微镜（AFM）和X射线光电子显微镜（XPS）。 同时，使用原位诊断技术，如光学发射光谱（OES）和增强型CCD（ICCD）成像来监测等离子体特性，包括发射谱、气体温度和放电形态。 拉曼光谱显示h-BN的E2g声子模式约为1366 cm_____, 确认了成功的合成。 SEM图像显示薄膜几乎完全覆盖表面，但存在局部剥离现象。 这可能是由于Si晶圆电阻加热不均匀、快速的沉积后冷却（$\sim$13 K/min）以及环境暴露所致。 AFM分析表明，在90分钟沉积后平均厚度约为33 nm（$\sim$22 nm/h沉积速率）。 XPS测量显示沿晶圆直径的平均B/N原子比为$\sim$1.5。 对理想薄膜性能的偏离（例如，化学计量单位、均匀形貌）归因于等离子体引起的不均匀性（如非均匀物种通量和温度梯度）以及其他因素（如沉积后的环境暴露），这些因素影响氮和硼的掺入以及局部薄膜性能。 尽管存在这些挑战，MHCD驱动的PECVD工艺在可扩展的h-BN合成方面显示出巨大潜力，需要进一步优化反应器设计、等离子体条件和气体化学成分以生长理想的薄膜。 显示英文摘要

摘要： Hexagonal boron nitride (h-BN) is deposited on Si <100> wafer ($\approx$20 cm2) via Plasma Enhanced Chemical Vapor Deposition (PECVD) using a ns-pulsed N2/Ar Micro Hollow Cathode Discharge (MHCD) as a microplasma source. For the first time, aluminum nitride (AIN) is employed as the dielectric material in the MHCD to mitigate film contamination by atomic oxygen, an issue previously observed with conventional Al 2O3 dielectrics. A comprehensive multi-diagnostic approach is followed to characterize the deposited h-BN, including Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray photoelectron microscopy (XPS). In parallel, in-situ diagnostics such as optical emission spectroscopy (OES) and intensified CCD (ICCD) imaging are used to monitor plasma properties, including emission profiles, gas temperature and discharge morphology. Raman spectra reveal the E2g phonon mode of h-BN around 1366 cm_____, confirming successful synthesis. SEM imaging reveals an almost complete surface coverage by the film, with localized delamination. This is probably due to an uneven resistive heating of the Si wafer, rapid post-deposition cooling ($\sim$13 K/min) and ambient exposure. AFM analysis indicates an average thickness of about 33 nm after 90 minutes of deposition ($\sim$22 nm/h deposition rate). XPS measurements reveal an average B/N atomic ratio of $\sim$1.5 along the wafer diameter. Deviations from ideal film properties (e.g., stoichiometric unity, uniform morphology) are attributed to plasma-induced inhomogeneities (such as non-uniform species flux and temperature gradients) among other factors (e.g., ambient exposure post-deposition), which affect nitrogen and boron incorporation and localized film properties. Despite these challenges, the MHCD-driven PECVD process demonstrates strong potential for scalable h-BN synthesis, with further optimization of the reactor design, plasma conditions, and gas chemistry required to grow ideal films.