标题： 基于直接电子检测的电子背散射衍射图样的快速纳米温度测量 显示英文标题

标题： Fast nanothermometry based on direct electron detection of electron backscattering diffraction patterns

摘要： 在下一代微电子器件中的纳米尺度准确温度测量对于热管理至关重要。 现有的光学和扫描探针测温技术在空间分辨率、准确性或侵入性方面存在局限。 在本工作中，我们展示了一种基于电子背散射衍射（EBSD）图案中温度引起的改变的快速且非接触的纳米测温方法，该方法利用扫描电子显微镜（SEM）中的高性能直接电子探测器捕获的EBSD图案。 通过动态电子模拟，我们建立了几种半导体（Si、Ge、GaAs和GaN）的理论温度灵敏度极限，表明热漫散射（TDS）会导致EBSD图案中Kikuchi带的可测量模糊。 我们开发了一种傅里叶分析方法，可以捕捉整个衍射图案中的这些细微变化，实现了约0.15%每K的模拟温度灵敏度。实验结果在硅上确认了0.14%每K的灵敏度，并在10秒的采集时间内实现了13 K的温度不确定性，并能够在热梯度下实现空间温度映射。 我们的方法为在SEM中直接实现实用且高分辨率的热图谱提供了一条途径，扩展了器件级热诊断的工具箱。 显示英文摘要

摘要： Accurate temperature measurement at the nanoscale is crucial for thermal management in next-generation microelectronic devices. Existing optical and scanning-probe thermometry techniques face limitations in spatial resolution, accuracy, or invasiveness. In this work, we demonstrate a fast and non-contact nanothermometry method based on temperature-induced changes in electron backscattering diffraction (EBSD) patterns captured by a high-performance direct electron detector within a scanning electron microscope (SEM). Using dynamical electron simulations, we establish the theoretical temperature sensitivity limits for several semiconductors (Si, Ge, GaAs, and GaN), showing that thermal diffuse scattering (TDS) leads to a measurable smearing of Kikuchi bands in the EBSD patterns. We develop a Fourier analysis method that captures these subtle changes across the full diffraction pattern, achieving a simulated temperature sensitivity of approximately 0.15\% per K. Experimental results on silicon confirm a sensitivity of 0.14\% per K and achieve a 13-K temperature uncertainty with a 10-second acquisition time, and enable spatial temperature mapping under thermal gradients. Our approach offers a pathway toward practical and high-resolution thermal mapping directly in SEMs, expanding the toolbox for device-level thermal diagnostics.