标题： 超导纳米结构的原位制备用于低温STM 显示英文标题

标题： Ex Situ Fabrication of Superconducting Nanostructures for Low-Temperature STM

摘要： 纳米制造技术使得灵活的实验设计成为可能，但由于扫描隧道显微镜和谱学（STM/STS）对表面质量要求严格，通常不兼容。 在此，我们提出一种制造策略，将体外纳米光刻与体内超高真空（UHV）解理相结合，以产生原子级清洁、纳米图案化的超导体/拓扑绝缘体（TI）异质结构，适用于高分辨率STM/STS。 在我们的初始设计I中，通过在TI薄膜中蚀刻凹槽来定义纳米带，然后进行铌覆盖，并在解理前翻转样品。 这使得STM/STS可以在大面积上应用，尽管由于蚀刻碎屑导致边缘质量受限。 为了克服这一点，我们开发了设计II，通过局部减薄薄膜而不是蚀刻整个薄膜来避免蚀刻，使纳米尺度的条带高于连续的TI层，然后再次进行Nb覆盖并在解理前翻转样品。 这种方法可产生干净、可重复的纳米结构，具有明确的超导能隙，证明了用于纳米尺度拓扑器件高分辨率STM/STS研究的可靠制造路径。 显示英文摘要

摘要： Nanofabrication enables flexible experimental design but is often incompatible with scanning tunneling microscopy and spectroscopy (STM/STS) due to the latter's stringent surface quality requirements. Here, we present a fabrication strategy that combines ex situ nanolithography with in situ ultrahigh-vacuum (UHV) cleaving to produce atomically clean, nanopatterned superconductor/topological insulator (TI) heterostructures suitable for high-resolution STM/STS. In our initial Design I, nanoribbons were defined by etching trenches into a TI film, followed by niobium capping and sample flipping before cleaving. This enabled STM/STS to be applied in large areas, although edge quality was limited by etch debris. To overcome this, we developed Design II, which avoids etching through the film by locally thinning it, leaving nanoscale ribbons raised above a continuous TI layer, followed again by Nb capping and sample flipping before cleaving. This method yields clean, reproducible nanostructures with well-defined superconducting gaps, demonstrating a reliable fabrication pathway for high-resolution STM/STS studies of nanoscale topological devices.