标题： 基于SRAM设计的α粒子免疫栅极全包围场效应晶体管（GAA-FET）预测 显示英文标题

标题： Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design

摘要： 在本文中，使用三维技术计算机辅助设计（TCAD）仿真，我们表明可以设计一种静态随机存取存储器（SRAM），该存储器采用环绕栅极场效应晶体管（GAA-FET）技术，使其对单个α粒子辐射错误具有免疫力。换句话说，通过这种设计，由于α粒子不会产生单粒子翻转（SEU）。我们首先在PHITS中使用从头算计算来表明，在Si和Si$_x$Ge$_{1-x}$中，α粒子存在一个最大线性能量转移（LET），即LETmax。基于此，通过设计基于底部介质隔离（BDI）的7nm以下GAA-FET的SRAM，我们表明即使粒子撞击处于最坏情况（LET > LETmax），SRAM也不会翻转。 显示英文摘要

摘要： In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design a static random-access memory (SRAM) using gate-all-around field-effect-transistor (GAA-FET) technology so that it is immune to single alpha particle radiation error. In other words, with the design, there will be no single-event upset (SEU) due to alpha particles. We first use ab initio calculations in PHITS to show that there is a maximum linear energy transfer (LET), LETmax, for the alpha particle in Si and Si$_x$Ge$_{1-x}$. Based on that, by designing a sub-7nm GAA-FET-based SRAM with bottom dielectric isolation (BDI), we show that the SRAM does not flip even if the particle strike is in the worst-case scenario (LET > LETmax).