标题： 硅单光子探测器在灵活操作模式下实现超过84%的光子检测效率 显示英文标题

标题： Silicon single-photon detector achieving over 84% photon detection efficiency with flexible operation modes

摘要： 硅单光子探测器(Si SPDs)在检测可见光谱中的单光子中起着关键作用。 对于各种应用，光子探测效率(PDE)是有效收集光子的最关键特性。 在此，我们提出了一种具有显著PDE的Si SPD，在785 nm处的PDE高达84.4%，支持多种操作模式。 我们设计并制造了一种厚结Si单光子雪崩二极管(SPAD)，通过背面照明结构增强雪崩概率，同时通过掺杂补偿雪崩区的设计来最小化噪声。 为了最大化PDE，我们实现了一个具有50 V熄灭电压的读出电路，使设备能够在自由运行、门控或混合模式下工作。 SPAD及其读出电路和相关电路被集成在一个紧凑的SPD模块中。 在自由运行模式下，该模块实现了84.4%的最大PDE，暗计数率为260 cps，在268 K时后脉冲概率为2.9%。这项工作为需要超高效Si SPD且具有多种操作模式的应用提供了实用的解决方案。 显示英文摘要

摘要： Silicon single-photon detectors (Si SPDs) play a crucial role in detecting single photons in the visible spectrum. For various applications, photon detection efficiency (PDE) is the most critical characteristic for effectively collecting photons. Here, we present a Si SPD with a remarkable PDE of up to 84.4% at 785 nm, supporting multiple operation modes. We design and fabricate a thick-junction Si single-photon avalanche diode (SPAD) that enhances the avalanche probability through a backside-illumination structure, while minimizing noise through the design of a doping-compensated avalanche region. To maximize PDE, we implement a readout circuit with a 50 V quenching voltage, enabling operation in free-running, gating, or hybrid modes. The SPAD, along with its readout circuits and affiliated circuits, is integrated into a compact SPD module. In free-running mode, the module achieves a maximum PDE of 84.4%, with a dark count rate of 260 cps, and an afterpulse probability of 2.9% at 268 K. This work provides a practical solution for applications requiring ultra-high-efficiency Si SPD with multiple operation modes.