标题： ZrO2中强电荷180度域壁对的原子尺度限制 显示英文标题

标题： Atomic-scale confinement of strongly charged 180 degree domain wall pairs in ZrO2

摘要： 自组织的极性纹理可以在铁电材料中跨多个长度尺度出现，从纳米尺度的涡旋和斯kyrmions，到介观尺度的条纹畴，再到宏观尺度的双晶图案，使这些现象成为凝聚态物理和纳米技术的核心。 与硅兼容的铁电材料，如HfO2和ZrO2，自发形成二维（2D）极性和非极性半单元层的交替堆叠，有效地将偶极子限制在孤立的单原子平面层中。 然而，每个极性平面上偶极子的排列通常被认为是均匀的。 在此，通过利用超薄ZrO2薄膜在平面视图方向的扫描透射电子显微镜（STEM），我们表明在这些不可约的窄极性层中，偶极子的排列可以显著不均匀，形成原子厚度、维度受限、带电的180度畴壁，最多只有几个单元细胞长，交替呈现头对头和尾对尾的构型。 头对头和尾对尾的畴壁各自采用完全不同的界面结构，并将面内畴限制在亚nm2的面积内，使其成为任何极性材料中报道的最小畴之一。 这项工作首次通过强带电的畴壁实验观察到了反极性铁电有序，同时嵌套在自组织的极性非极性层结构中，揭示了原子尺度上极性纹理的新层次自组织，并为在与硅兼容的简单二元氧化物中开发原子密集存储器和畴壁纳米电子学开辟了新途径。 显示英文摘要

摘要： Self organized polar textures can occur in ferroelectric materials across multiple length scales, from nanometer scale vortices and skyrmions, to mesoscopic stripe domains, and macroscopic twin patterns, making these phenomena central to condensed matter physics and nanotechnology. Silicon compatible ferroelectrics such as HfO2 and ZrO2 spontaneously form alternating stacks of two dimensional (2D) polar and nonpolar half unit cell layers, effectively confining dipoles to isolated, single atomic plane layers. However, the arrangement of dipoles within each polar plane is generally considered uniform. Here, by utilizing scanning transmission electron microscopy (STEM) of an ultrathin ZrO2 film in the plan view orientation, we show that within these irreducibly narrow polar layers, the dipole organization can be strikingly non-uniform, forming atomically thin, dimensionally confined, charged 180 degree domain walls, at most a few unit cells long, alternating between head to head and tail to tail configurations. Head to head and tail to tail walls each adopt completely distinctive interfacial structures and confine the in-plane domains to a sub nm2 footprint, making them one of the smallest domains to be reported in any polar material. This work represents the first experimental observation of antipolar ferroic ordering via strongly charged domain walls, while being nested within the self organized polar nonpolar layering, revealing a novel hierarchical self-organization of polar textures at the atomic scale, and opening new pathways to atomically dense memories and domain wall nanoelectronics in silicon compatible, simple binary oxides.