标题： 冰辅助软着陆沉积用于范德华集成 显示英文标题

标题： Ice-assisted soft-landing deposition for van der Waals integration

摘要： 范德华集成使能够创建超越现有材料限制的电子和光电设备，具有前所未有的性能和新功能。 然而，通常使用物理拾取和放置过程来实现，以最小化界面损伤，并且很难集成到传统的光刻和金属化工艺中。 在此，我们展示了一种简单的原位转移策略用于范德华集成，其中一层非晶水冰薄膜作为缓冲层，在金属化过程中保护免受高能团簇的轰击。 冰升华后，沉积的金属薄膜可以温和且原位地放置在底层基底上，形成原子清洁且无损伤的金属-半导体界面。 这种策略允许在单层MoS2上超净且无损地制造高质量接触，这对制作具有超高开/关比（1010）、迁移率80（cm2 V-1s-1）的高性能二维场效应晶体管非常有益，并且还能减少费米能级钉扎效应。 我们还展示了通过CVD生长的MoS2晶体管阵列的批量生产，具有均匀的电学特性。 这种温和且超净的制造方法已被进一步扩展到高反应性材料，如卤化物钙钛矿。 我们的方法可以轻松集成到成熟的半导体制造技术中，并可能成为制造范德华接触器件的通用策略。 显示英文摘要

摘要： Van der Waals integration enables the creation of electronic and optoelectronic devices with unprecedented performance and novel functionalities beyond the existing material limitations. However, it is typically realized using a physical pick-up-and-place process to minimize interfacial damages and is hardly integrated into conventional lithography and metallization procedures. Here we demonstrate a simple in situ transfer strategy for van der Waals integration, in which a thin film of amorphous water ice acts as a buffer layer to shield against the bombardment of energetic clusters during metallization. After ice sublimation, the deposited metal film can be gently and in situ placed onto underlying substrates, to form an atomically clean and damage-free metal-semiconductor interface. This strategy allows ultra-clean and non-destructive fabrication of high-quality contacts on monolayer MoS2, which is extremely beneficial to produce a high-performance 2D field-effect transistor with an ultra-high on/off ratio of 1010, mobility of 80 (cm2 V-1s-1), and also with reduced Fermi level pinning effect. We also demonstrate the batch production of CVD-grown MoS2 transistor arrays with uniform electrical characteristics. Such a gentle and ultra-clean fabrication approach has been further extended to materials with high reactivity, such as halide perovskites. Our method can be easily integrated with mature semiconductor manufacturing technology and may become a generic strategy for fabricating van der Waals contacted devices.