标题： 通过机械种子位错增强β-Ga₂O₃ 显示英文标题

标题： Toughening beta-Ga2O3 via mechanically seeded dislocations

摘要： \b{eta}-Ga2O3 是下一代半导体的有前途的候选材料，但其固有的脆性限制了它在柔性电子和高精度器件中的应用。本研究探索了一种新方法，通过表面刮擦引入机械种子位错来提高(001)取向\b{eta}-Ga2O3 的损伤容限。通过将布氏压头沿[100]方向刮擦表面，我们有效生成了属于(011)[01-1]和/或(0-11)[011]滑移系统的边缘型位错，在中尺度磨损轨迹内。通过纳米压痕测试、表面形貌分析以及利用扫描电子显微镜（SEM）和透射电子显微镜（TEM）进行的微观结构表征，我们发现位错的引入显著减轻了压痕过程中解理裂纹的形成，与原始\b{eta}-Ga2O3 中观察到的情况相反。亚表面层中的机械种子位错通过促进稳定的塑性变形，在防止脆性断裂方面起着重要作用。 显示英文摘要

摘要： \b{eta}-Ga2O3 is a promising candidate for next-generation semiconductors, but is limited by its intrinsic brittleness, which hinders its application in flexible electronics and high-precision devices. This study explores a new approach to improving the damage tolerance of (001)-oriented \b{eta}-Ga2O3 by introducing mechanically seeded dislocations via surface scratching. By applying a Brinell indenter to scratch the surface along the [100] direction, we effectively generate edge-type dislocations belonging to the (011)[01-1] and/or (0-11)[011] slip systems within a mesoscale wear track. Through a combination of nanoindentation tests, surface morphology analysis, and microstructural characterization using scanning electron microscopy (SEM) and transmission electron microscopy (TEM), we reveal that the introduction of dislocations significantly mitigates the formation of cleavage cracks during indentation, in contrast to that observed in as-received \b{eta}-Ga2O3. The mechanically seeded dislocations in the subsurface layers play an important role in preventing brittle fracture by facilitating stable plastic deformation.