标题： 通过X射线显微镜揭示铁电电容器中的电极修饰域形态 显示英文标题

标题： Electrode modified domain morphology in ferroelectric capacitors revealed by X-ray microscopy

摘要： 铁电薄膜为下一代计算和存储应用提供了强大的平台。 然而，尽管对实际器件性能的重要性，埋藏铁电堆栈中的畴形态和动力学仍鲜有研究。 在此，使用纳米探针X射线衍射（nano-XRD）来成像基于BiFeO3的电容器内的铁电畴，揭示了与裸薄膜的显著差异，如畴结构中的局部无序和部分极化重新取向。 我们展示了在极化电容器中对铁电翻转的敏感性，利用nano-XRD揭示了上极化/下极化时的扩张/压缩(001)应变。 我们观察到通过压电力显微镜(PFM)极化和在器件中极化的定量和定性差异。 此外，偏置会在电极边缘引起晶格倾斜，这可能在缩小尺寸的器件中改变性能。 与PFM极化结构的直接比较甚至证明了nano-XRD对畴壁的潜在敏感性。 我们的结果确立了nano-XRD作为埋藏铁电畴形态和动力学的非侵入性探测工具，为高效能纳米尺度器件的操作表征开辟了途径。 显示英文摘要

摘要： Ferroelectric thin films present a powerful platform for next generation computing and memory applications. However, domain morphology and dynamics in buried ferroelectric stacks have remained underexplored, despite the importance for real device performance. Here, nanoprobe X-ray diffraction (nano-XRD) is used to image ferroelectric domains inside BiFeO3-based capacitors, revealing striking differences from bare films such as local disorder in domain architecture and partial polarization reorientation. We demonstrate sensitivity to ferroelectric reversal in poled capacitors, revealing expansive/compressive (001) strain for up-/down-polarization using nano-XRD. We observe quantitative and qualitative differences between poling by piezoresponse force microscopy (PFM) and in devices. Further, biasing induces lattice tilt at electrode edges which may modify performance in down-scaled devices. Direct comparison with PFM polarized structures even demonstrates potential nano-XRD sensitivity to domain walls. Our results establish nano-XRD as a noninvasive probe of buried ferroelectric domain morphologies and dynamics, opening avenues for operando characterization of energy-efficient nanoscale devices.