标题： 基于2T-nC FeRAM的单细胞通用逻辑内存：一种用于批量位运算的面积和能耗高效的方案 显示英文标题

标题： Single-Cell Universal Logic-in-Memory Using 2T-nC FeRAM: An Area and Energy-Efficient Approach for Bulk Bitwise Computation

摘要： 这项工作提出了一种新方法，用于配置2T-nC铁电随机存取存储器（FeRAM），以执行单单元逻辑内存储操作，突显了其在节能计算方面优于传统基于DRAM的方法的优势。 与传统的1T-1C动态RAM（DRAM）不同，后者需要刷新开销，2T-nC FeRAM作为一种低能耗的非易失性存储解决方案，提供了有前景的替代方案。 我们的主要发现包括在2T-nC FeRAM中使用准非破坏性读出（QNRO）感应技术在逻辑内存储（LiM）应用中的潜力，展示了其固有的能力，在不需要外部修改的情况下执行反相逻辑，这是传统1T-1C DRAM所不具备的特性。 我们成功地在一个2T-nC FeRAM单元中实现了MINORITY功能，使通用NAND和NOR逻辑成为可能，通过SPICE仿真和实验数据进行了验证。 此外，该研究探讨了与2T-nC FeRAM进行3D集成的可行性，显示出存储和计算密度的显著提升，促进了批量位运算。 我们对八个现实世界的数据密集型应用程序进行评估，结果显示，2T-nC FeRAM的性能比DRAM高2倍，能耗低2.5倍。 此外，验证了堆叠的2T-nC FeRAM的热稳定性，确认了其在集成到计算芯片上时的可靠运行。 这些发现强调了2T-nC FeRAM在LiM中的优势，相较于传统DRAM表现出更优越的性能和能效。 显示英文摘要

摘要： This work presents a novel approach to configure 2T-nC ferroelectric RAM (FeRAM) for performing single cell logic-in-memory operations, highlighting its advantages in energy-efficient computation over conventional DRAM-based approaches. Unlike conventional 1T-1C dynamic RAM (DRAM), which incurs refresh overhead, 2T-nC FeRAM offers a promising alternative as a non-volatile memory solution with low energy consumption. Our key findings include the potential of quasi-nondestructive readout (QNRO) sensing in 2T-nC FeRAM for logic-in-memory (LiM) applications, demonstrating its inherent capability to perform inverting logic without requiring external modifications, a feature absent in traditional 1T-1C DRAM. We successfully implement the MINORITY function within a single cell of 2T-nC FeRAM, enabling universal NAND and NOR logic, validated through SPICE simulations and experimental data. Additionally, the research investigates the feasibility of 3D integration with 2T-nC FeRAM, showing substantial improvements in storage and computational density, facilitating bulk-bitwise computation. Our evaluation of eight real-world, data-intensive applications reveals that 2T-nC FeRAM achieves 2x higher performance and 2.5x lower energy consumption compared to DRAM. Furthermore, the thermal stability of stacked 2T-nC FeRAM is validated, confirming its reliable operation when integrated on a compute die. These findings emphasize the advantages of 2T-nC FeRAM for LiM, offering superior performance and energy efficiency over conventional DRAM.