标题： 螺旋四层石墨烯中的四个莫尔材料在一种魔角 显示英文标题

标题： Four Moiré materials at One Magic Angle in Helical Quadrilayer Graphene

摘要： 我们引入了螺旋扭曲的四层石墨烯（HTQG），由四个石墨烯片以相同的小角度旋转组成，作为相关拓扑物质的通用且实验可访问的平台。 HTQG包含三个由相邻石墨烯层之间的干涉形成的莫尔晶格，这些晶格彼此扭曲。 晶格松弛产生四种大尺度的共格区域。 这些区域的特点是三个莫尔晶格的堆叠方式，分为两种类型：I型“布纳尔”堆叠和II型“菱方”堆叠。 相邻堆叠之间的域壁通常容纳拓扑保护的边缘态，在超莫尔和超超莫尔尺度上形成网络。 值得注意的是，所有四个莫尔子结构在相同的魔角$\theta \approx 2.3^\circ$处都有窄带，使得它们的相关相可以在器件制造中同时被靶向。 我们认为I型区域特别适合实现从掺杂拓扑绝缘体和$C = \pm 2$带中的陈绝缘体中出现的稳健超导性。 显示英文摘要

摘要： We introduce helical twisted quadrilayer graphene (HTQG), four graphene sheets rotated by the same small angle, as a versatile and experimentally accessible platform for correlated topological matter. HTQG consists of three moir\'e lattices, formed by interference between adjacent graphene layers, that are twisted relative to each other. Lattice relaxation produces four types of large-scale commensurate domains. The domains are characterized by the stacking of the three moir\'e lattices and come in two types: Type-I "Bernal" stacking and Type-II "rhombohedral" stacking. Domain walls between adjacent stackings often host topologically protected edge states, forming networks at the supermoir\'e and super-supermoir\'e scales. Remarkably, all four moir\'e substructures have narrow bands at the same magic angle $\theta \approx 2.3^\circ$, allowing their correlated phases to be simultaneously targeted in device manufacturing. We argue that the Type-I domains are especially suitable for realizing robust superconductivity which emerges from doping topological insulators, and Chern insulators in $C = \pm 2$ bands.