标题： 莫尔重要吗？ 基于石墨烯的整数和分数陈绝缘体中的临界莫尔依赖性与量子涨落 显示英文标题

标题： Does Moire Matter? Critical Moire Dependence with Quantum Fluctuations in Graphene Based Integer and Fractional Chern Insulators

摘要： 菱方多层石墨烯已成为研究平带驱动相关现象的强大平台，但大多数方面仍未被理解。 在本工作中，我们系统地研究了菱方六层石墨烯中的莫尔依赖能带拓扑结构。 首次证明莫尔扭曲角度在菱方六层石墨烯/六方氮化硼（RHG/hBN）莫尔超晶格中形成莫尔陈绝缘体中起着关键作用。 在填充因子v = 1的莫尔远距离区域，只有扭曲角度{\theta } < 1.1{\deg }的系统表现出整数莫尔陈绝缘体，而v = 2/3处的分数陈绝缘体需要更小的扭曲角度才能稳定。 我们的理论模型包括量子涨落和精确对角化结果，表明已被广泛采用的平均场理论无法解释v = 1相图的扭曲角度依赖性，相关效应至关重要。 此外，我们在石墨烯和hBN之间实现了两种不同的堆叠构型（ /Xi=0 和 /Xi=1），并发现这两种情况都可以在v = 1时产生陈绝缘体。 我们的实验工作颠覆了当前的平均场范式，阐明了量子涨落和莫尔效应如何塑造RHG/hBN相图，并为未来理解和设计菱方石墨烯莫尔系统中的拓扑相关态铺平了道路。 显示英文摘要

摘要： Rhombohedral multilayer graphene has emerged as a powerful platform for investigating flat-band-driven correlated phenomena, yet most aspects remain not understood. In this work, we systematically study the moire-dependent band topology in rhombohedral hexalayer graphene. For the first time we demonstrate that the moire twist angle plays a crucial role in the formation of the moire Chern insulators in rhombohedral hexalayer graphene/hexagonal boron nitride (RHG/hBN) moire superlattices. In the moire-distant regime at filling factor v = 1, only systems with a twist angle {\theta} < 1.1{\deg} exhibit an integer moire Chern insulator, while the fractional Chern insulator at v = 2/3 requires smaller twist angle to be stabilized. Our theoretical modelling, which includes quantum fluctuations and exact diagonalization results, suggests that mean-field theory, which has been widely adopted, does not explain the twist-angle dependence of the v = 1 phase diagram, and that correlation effects are crucial. Moreover, we realize two distinct stacking configurations ( /Xi=0 and /Xi=1) between graphene and hBN, and find that both cases can yield a Chern insulator at v = 1. Our experimental work upends the current mean-field paradigm, illuminates how quantum fluctuations and moir\'e effects shape the RHG/hBN phase diagram, and paves the way for future understanding and engineering of topological correlated states in rhombohedral graphene moire systems.