标题： 对射频处理的X波段行波结构的尸检 显示英文标题

标题： Autopsy on an RF-Processed X-band Travelling Wave Structure

摘要： 为了找出x波段加速结构中高电场击穿的原因，我们对一个经过射频处理的结构进行了干净的解剖（没有在操作后拆卸结构时添加碎片）。通过射频反射波分析和声学传感器检测提供的宏观定位，将击穿现象与解剖的坑状损伤区域联系起来。令人惊讶的是，显微分析显示击穿坑出现在低电场区域。输入耦合器尖角上由磁场引起的高电流似乎是对观察到的极端击穿损坏负责。 显示英文摘要

摘要： In an effort to locate the cause(s) of high electric-field breakdown in x-band accelerating structures, we have cleanly-autopsied (no debris added by post-operation structure disassembly) an RF-processed structure. Macroscopic localization provided operationally by RF reflected wave analysis and acoustic sensor pickup was used to connect breakdowns to autopsied crater damage areas. Surprisingly, the microscopic analyses showed breakdown craters in areas of low electric field. High currents induced by the magnetic field on sharp corners of the input coupler appears responsible for the extreme breakdown damage observed.