标题： 辐射硅中的类型反转：一个半真半假的事实 显示英文标题

标题： Type inversion in irradiated silicon: a half truth

摘要： 对使用掠入射角度强辐照的p-spray dofz像素传感器进行的电荷收集测量提供了检测器内部电场的灵敏确定。 数据与包括信号捕获和电荷感应效应的传感器完整电荷传输模拟进行了比较。 基于常数类型反型有效掺杂浓度标准图景的线性变化电场与数据不一致。 在ISE TCAD软件中实现的双陷阱双结模型可以调整以产生双峰电场，该电场在两种不同通量下合理地描述了数据。 建模的电场与基于瞬态电流技术的先前确定结果有些不同。 该模型还可以解释数据中观察到的信号捕获水平。 显示英文摘要

摘要： Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trapping observed in the data.