标题： 纳米尺度表面粗糙度对GaAs光阴极横向能量散布的影响 显示英文标题

标题： Effect of nano-scale surface roughness on transverse energy spread from GaAs photocathodes

摘要： 高量子产率、低横向能量散布和快速响应时间使GaAs激活为负电子亲和力，成为高亮度光注入器中光电阴极的理想候选材料。 即使经过数十年的研究，GaAs电子发射的确切机制仍未被充分理解。 我们表明，纳米尺度的表面粗糙度可以将近一个数量级地影响来自GaAs的横向电子散布，并解释了迄今为止看似矛盾的实验结果。 该模型还可以解释测量到的横向能量散布与入射光波长之间的依赖关系。 显示英文摘要

摘要： High quantum yield, low transverse energy spread and prompt response time make GaAs activated to negative electron affnity, an ideal candidate for a photocathode in high brightness photoinjectors. Even after decades of investigation, the exact mechanism of electron emission from GaAs is not well understood. We show that a nanoscale surface roughness can affect the transverse electron spread from GaAs by nearly an order of magnitude and explain the seemingly controversial experimental results obtained so far. This model can also explain the measured dependence of transverse energy spread on the wavelength of incident light.