标题： 激发依赖的带结构变化对InGaN发光二极管效率的影响 显示英文标题

标题： Influences of excitation-dependent bandstructure changes on InGaN light-emitting diode efficiency

摘要： 纤锌矿量子阱的能带结构特性会因载流子密度的变化而显著改变，这是由于量子限制斯塔克效应的屏蔽作用。 描述了一种将这些变化纳入InGaN发光二极管模型的方法。 通过在包络近似下求解泊松方程和k\cdotp 方程，计算不同载流子密度下的能带结构。 这些信息被用作动量分辨电子和空穴态中粒子数的动力学模型的输入。 通过建模激发函数的器件内量子效率来说明该方法的应用。 显示英文摘要

摘要： Bandstructure properties in wurtzite quantum wells can change appreciably with changing carrier density because of screening of quantum-confined Stark effect. An approach for incorporating these changes in an InGaN light-emitting-diode model is described. Bandstructure is computed for different carrier densities by solving Poisson and k\cdotp equations in the envelop approximation. The information is used as input in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach is illustrated by modeling device internal quantum efficiency as a function of excitation.