标题： p+ n 硅条传感器中 Si-SiO2 界面电荷损失的时间依赖性 显示英文标题

标题： Time dependence of charge losses at the Si-SiO2 interface in p+n-silicon strip sensors

摘要： 研究了在1 MGy X射线辐照前后，在p+n条状传感器中靠近Si-SiO2界面处生成的载流子收集情况，使用波长为660 nm、吸收长度为3.5 μm（室温下硅中）的亚纳秒聚焦光脉冲，采用瞬态电流技术进行了研究。 本文描述了用于确定收集到的电子和空穴数量的测量和分析技术。 根据偏置历史、湿度和辐照情况，观察到电子或空穴的不完全收集。 电荷损失随时间变化。 电子和空穴的时间常数不同，并且当相对湿度从约80%降低到小于1%时，时间常数增加两个数量级。 提出了尝试解释这些结果的方法。 显示英文摘要

摘要： The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transient current technique with sub-nanosecond focused light pulses of 660 nm wavelength, which has an absorption length of 3.5 um in silicon at room temperature. The paper describes the measurement and analysis techniques used to determine the number of electrons and holes collected. Depending on biasing history, humidity and irradiation, incomplete collection of either electrons or holes is observed. The charge losses change with time. The time constants are different for electrons and holes and increase by two orders of magnitude when reducing the relative humidity from about 80 % to less than 1 %. An attempt to interpret these results is presented.