标题： 半导体太阳能超吸收器 显示英文标题

标题： Semiconductor solar superabsorber

摘要： 理解半导体材料中太阳能吸收的最大增强效应对于光捕获的承诺在于开发经济实惠的太阳能电池。然而，传统的兰伯特极限仅适用于具有弱吸收的理想化材料系统，并且由于这些材料具有显著的吸收特性，该极限不能用于太阳能电池中使用的典型半导体材料。在此，我们理论上展示了半导体材料的最大太阳能吸收增强效应，并阐明了接近理论最大值的光捕获结构的一般设计原则。遵循这些原则，我们设计了一种实用的光捕获结构，可以使半导体材料（例如，10纳米厚的非晶硅）实现超过90%的带隙以上阳光吸收。该设计的活性材料体积比文献中现有的任何太阳能光捕获设计都要少一个数量级。这项工作指向了终极太阳能光捕获技术的发展方向。 显示英文摘要

摘要： Understanding the maximal enhancement of solar absorption in semiconductor materials by light trapping promises the development of affordable solar cells. However, the conventional Lambertian limit is only valid for idealized material systems with weak absorption, and cannot hold for the typical semiconductor materials used in solar cells due to the substantial absorption of these materials. Herein we theoretically demonstrate the maximal solar absorption enhancement for semiconductor materials and elucidate the general design principle for light trapping structures to approach the theoretical maximum. By following the principles, we design a practical light trapping structure that can enable an ultrathin layer of semiconductor materials,for instance, 10 nm thick a-Si, absorb > 90% sunlight above the bandgap. The design has active materials with one order of magnitude less volume than any of the existing solar light trapping designs in literature. This work points towards the development of ultimate solar light trapping techniques.