标题： 通过石墨烯-硅微环谐振器实现高消光比的有效电光调制 显示英文标题

标题： Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator

摘要： 石墨烯由于其高载流子迁移率、超大吸收带宽和极快的材料响应，为新型光电应用打开了可能性。特别是通过调节费米能级来控制光电特性，使得电光调制、光-光切换和其他光电应用成为可能。然而，由于石墨烯-硅器件中石墨烯与光的相互作用较弱，通常仅使用单层或少层石墨烯，因此实现高调制深度仍是一个挑战。在这里，我们全面研究了石墨烯与微环谐振器之间的相互作用及其对光学调制深度的影响。我们展示了石墨烯-硅微环器件，其在相对较低的偏置电压8.8 V下表现出12.5 dB的高调制深度。通过施加峰峰值电压为4 V的方波，成功实现了消光比为3.8 dB的开-关电光切换。 显示英文摘要

摘要： Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of Fermi level enables electro-optical modulation, optical-optical switching, and other optoelectronics applications. However, achieving a high modulation depth remains a challenge because of the modest graphene-light interaction in the graphene-silicon devices, typically, utilizing only a monolayer or few layers of graphene. Here, we comprehensively study the interaction between graphene and a microring resonator, and its influence on the optical modulation depth. We demonstrate graphene-silicon microring devices showing a high modulation depth of 12.5 dB with a relatively low bias voltage of 8.8 V. On-off electro-optical switching with an extinction ratio of 3.8 dB is successfully demonstrated by applying a square-waveform with a 4 V peak-to-peak voltage.