标题： 光暗物质在半导体中的吸收 显示英文标题

标题： Absorption of light dark matter in semiconductors

摘要： 半导体如今已成为通过与电子散射直接探测MeV到GeV暗物质的成熟目标。我们表明，半导体目标也可以通过吸收过程探测质量更轻的暗物质。当暗物质质量高于半导体的带隙（约为电子伏特）时，吸收过程通过将电子激发到导带进行。低于带隙时，多声子激发使暗物质在0.01电子伏特至电子伏特的质量范围内能够被吸收。来自太阳的能量暗物质粒子也可以探测低于电子伏特质量的暗物质。我们推导了锗和硅中残留的动能混合暗光子或赝标量的吸收范围，并表明现有的直接探测结果已经探测到新的参数空间。只需适度的暴露，低阈值半导体目标实验可以超过当前亚keV玻色子暗物质的天体物理和地球约束。 显示英文摘要

摘要： Semiconductors are by now well-established targets for direct detection of MeV to GeV dark matter via scattering off electrons. We show that semiconductor targets can also detect significantly lighter dark matter via an absorption process. When the dark matter mass is above the band gap of the semiconductor (around an eV), absorption proceeds by excitation of an electron into the conduction band. Below the band gap, multi-phonon excitations enable absorption of dark matter in the 0.01 eV to eV mass range. Energetic dark matter particles emitted from the sun can also be probed for masses below an eV. We derive the reach for absorption of a relic kinetically mixed dark photon or pseudoscalar in germanium and silicon, and show that existing direct detection results already probe new parameter space. With only a moderate exposure, low-threshold semiconductor target experiments can exceed current astrophysical and terrestrial constraints on sub-keV bosonic dark matter.