标题： 超薄晶体硅太阳能电池中的二氧化钛空穴阻挡层 显示英文标题

标题： Titanium dioxide hole-blocking layer in ultra-thin-film crystalline silicon solar cells

摘要： 其中一个阻碍接近晶体硅（c-Si）太阳能电池理论效率极限的障碍是，在欧姆接触处少数载流子的界面复合损失非常大。 在超薄膜c-Si太阳能电池中，由于前者的体积更小且少数载流子浓度更高，这种接触复合损失比传统厚电池严重得多。 本文提出了一种新型的电子通过（欧姆）接触设计，该接触对空穴具有阻挡作用，显著减少了空穴复合。 该接触是通过沉积一层薄的二氧化钛（TiO2）层形成硅金属-绝缘体-半导体（MIS）接触。 具有这种TiO2 MIS接触的2{\mu }m厚的Si电池实现了645 mV的开路电压（Voc），比具有金属接触的超薄电池高10 mV。 这种MIS接触为超薄膜c-Si太阳能电池实现与传统厚电池一样高的效率提供了新途径，并实现了以较低成本制造高效c-Si太阳能电池。 显示英文摘要

摘要： One of the remaining obstacles to approaching the theoretical efficiency limit of crystalline silicon (c-Si) solar cells is the exceedingly high interface recombination loss for minority carriers at the Ohmic contacts. In ultra-thin-film c-Si solar cells, this contact recombination loss is far more severe than for traditional thick cells due to the smaller volume and higher minority carrier concentration of the former. This paper presents a novel design of an electron passing (Ohmic) contact to n-type Si that is hole-blocking with significantly reduced hole recombination. This contact is formed by depositing a thin titanium dioxide (TiO2) layer to form a silicon metal-insulator-semiconductor (MIS) contact. A 2 {\mu}m thick Si cell with this TiO2 MIS contact achieved an open circuit voltage (Voc) of 645 mV, which is 10 mV higher than that of an ultra-thin cell with a metal contact. This MIS contact demonstrates a new path for ultra-thin-film c-Si solar cells to achieve high efficiencies as high as traditional thick cells, and enables the fabrication of high-efficiency c-Si solar cells at a lower cost.